Phase-change device, related manufacturing method, and related electronic device
US9691974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jun 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a phase-change device may include the following steps: preparing a substrate; preparing a first dielectric layer, which may be positioned on the substrate; preparing a first electrode, which may be positioned in the first dielectric layer; forming a phase-change material layer, which may overlap the first electrode; processing (e.g., etching) the phase-change material layer to form a phase-change member, which may be electrically connected to the first electrode; forming an etch-stop layer, which may overlap and/or cover the phase-change member; forming an intermediary layer, which may be positioned on the etch-stop layer; forming a second dielectric layer, which may be positioned on the intermediary layer; and forming a second electrode, which may extend through the second dielectric layer, the intermediary layer, and the etch-stop layer and may be electrically connected to the phase-change member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.