Patent · US Active

Conductive bridging memory device

US9691975B2 · kind B2 · utility

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0References

6Claims

0Family size

Assignees

IMEC VZW · BE
Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

Ludovic Goux · Hannut, BE
Attilio Belmonte · Rende, IT

Key dates

Filing date	Dec 1, 2015
Grant date	Jun 27, 2017
Priority date	—
Expiry date	Dec 1, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8833
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A Conductive Bridge Random Access Memory (CBRAM) device comprising an insulating electrolyte element sandwiched between a cation supply electrode and a bottom electrode, whereby the conductivity σ of the cation provided by the cation supply electrode in the electrolyte element increases towards the bottom electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.