Photoelectric conversion device vapor deposition material, photoelectric conversion device, sensor, and imaging device
US9691999B2 · kind B2 · utility
2Cited by
4References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2014 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jul 9, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In the photoelectric conversion device having a pair of electrodes and a light receiving layer sandwiched between the pair of electrodes and including at least a photoelectric conversion layer, at least a part of the light receiving layer includes a fullerene or a fullerene derivative deposited using a vapor deposition material of a plurality of particles or a compact formed of the particles consisting primarily of the fullerene or fullerene derivative with an average particle size expressed as D50% of 50 to 300 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.