Power amplifier modules with bifet and harmonic termination and related systems, devices, and methods
US9692357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.