RF power transistors with video bandwidth circuits, and methods of manufacture thereof
US9692363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Oct 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/75
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.