Configurable exclusive-OR / exclusive-NOR gate using magneto-electric tunnel junctions

US9692413B2 · kind B2 · utility

Assignees

• The Research Foundation for The State University of New York · US
• The Board of Regents of the University of Texas System · US

Inventors

• Jonathan P. Bird · Buffalo, US
• Andrew Marshall · Grand Valley, CA

Key dates

• Filing date: Oct 28, 2016
• Grant date: Jun 27, 2017
• Expiry date: Oct 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A configurable ME MTJ XOR/XNOR gate includes an insulator separating a top and bottom FM layer, a top ME layer with a first boundary magnetism at an interface of the top ME layer and the top FM layer, a bottom ME layer with a second boundary magnetism at an interface of the bottom ME layer and the bottom FM layer, and a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer. A voltage between the top electrode and FM layer is a first input, a voltage between the bottom electrode and FM layer is a second input, and a resistance between the top and bottom FM layer is indicative of the XOR or the XNOR of the inputs. The configurable ME MTJ XOR/XNOR gate has reduced energy consumption, smaller area, faster switching times, is non-volatile, and is configurable.