Photoresist pattern trimming compositions and methods
US9696629B2 · kind B2 · utility
1Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2015 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Dec 16, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.