Patent · US Active

Memory and interface circuit for bit line of memory

US9697890B1 · kind B1 · utility

31Cited by
14References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 1, 2016
Grant dateJul 4, 2017
Priority date
Expiry dateJun 1, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/412
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An interface circuit is provided. A NMOS transistor is coupled between a first bit line and a ground. A logic gate is coupled between a gate of the NMOS transistor and a second bit line. A keeper controls a voltage level of the second bit line according to a reference voltage. A tracking circuit includes a plurality of reference bit cells and a pull-up device coupled to a reference bit line. Each reference bit cell is coupled to a read word line. When a bit cell coupled to the second bit line is accessed by a specific read word line, the reference bit cell coupled to the specific read word line drains a current from the pull-up device. The tracking circuit provides the reference voltage according to the current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.