Method of manufacturing element chip and method of manufacturing electronic component-mounted structure using plasma etch to singulate element chip
US9698052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing an element chip for manufacturing a plurality of element chips by dividing a substrate, where the protruding portions, which are exposed element electrodes, are formed on element regions, protection films made of fluorocarbon film are formed on a second surface and side surfaces of the element chip, and a first surface in a gap by exposing the element chip to second plasma after the substrate is divided by etching. Next, the protection films formed on the second surface and the side surfaces of the element chip are removed while leaving at least a part of the protection film formed in the gap by exposing the element chip to third plasma. Therefore, creep-up of a conductive material in a mounting step is suppressed by the left protection film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.