Thin film transistor, display, and method for fabricating the same
US9698173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2015 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Jan 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.