CMOS image sensor
US9698183B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Jan 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS image sensor including: an array of M×N pixels, the pixels of a same column being connected to a same output track, each pixel including a photodiode, a sense node, a transfer transistor, a reset transistor, and a read circuit; and a test circuit including an assembly of N elementary reference cells respectively connected to the N output tracks of the sensor, each cell including a resistor, a sense node, a transfer transistor, a reset transistor, and a read circuit, the N resistors being series-connected between first and second nodes of application of a reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.