Semiconductor device
US9698258B2 · kind B2 · utility
11Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2015 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Jul 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rsp by minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal results. Moreover, a high frequency application achieves useful results by reducing a gate charge Qg for an identical device pitch to that of an alternative technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.