Photovoltaic device including a P-N junction and method of manufacturing

US9698285B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Dan Damjanovic · Perrysburg, US
• Feng Liao · Perrysburg, US
• Rick C. Powell · Ann Arbor, US
• Rui Shao · Dublin, US
• Jigish Trivedi · Boise, US
• Zhibo Zhao · Ann Arbor, US

Key dates

• Filing date: Feb 3, 2014
• Grant date: Jul 4, 2017
• Expiry date: Dec 28, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.