Sub-diffraction-limited patterning and imaging
US9703211B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 16, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Oct 16, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for sub-diffraction-limited patterning using a photoswitchable layer is disclosed. A sample of the photoswitchable layer can be selectively exposed to a first wavelength of illumination that includes a super-oscillatory peak. The sample can be selectively exposed to a second wavelength of illumination that does not include the super-oscillatory peak. A region in the sample that corresponds to the super-oscillatory peak and is associated with the second transition state can optionally be converted into a third transition state. The region in the sample at the third transition state can constitute a pattern of an isolated feature with a size that is substantially smaller than a far-field diffraction limit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.