Patent · US Active

Asymmetrical memristor

US9704093B2 · kind B2 · utility

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1References
6Claims
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Key dates

Filing dateJul 14, 2015
Grant dateJul 11, 2017
Priority date
Expiry dateJul 14, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/52
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Embodiments of the present invention provide a memristor having a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.