Asymmetrical memristor
US9704093B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Jul 14, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Jul 14, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a memristor having a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.