Magnetoresistive sensor with SAF structure having amorphous alloy layer
US9704517B2 · kind B2 · utility
1Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Dec 8, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Dec 8, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.