Memory device and a method of operating the same
US9704571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Jul 13, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4096
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a memory device includes writing cell data having one of at least three states to a memory cell; amplifying a voltage level of a bit line connected to the memory cell; determining that the cell data is in a first state when the voltage level of the bit line sensed at a sensing point is equal to or greater than a first reference voltage; determining that the cell data is in a second state when the voltage level of the bit line sensed at the sensing point is equal to or less than a second reference voltage which has a lower voltage level than the first reference voltage; and determining that the cell data is in a third state when the cell data is not in the first or second states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.