Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus
US9704733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2013 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Nov 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.