Method for manufacturing silicon carbide semiconductor device
US9704743B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | May 23, 2014 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | May 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating layer is formed on a substrate made of silicon carbide. By performing etching using a mask layer formed on the insulating layer, a contact hole is formed in the insulating layer to expose a contact region, which is a portion of a main surface of the substrate. The step of forming the contact hole includes a step of providing the contact region with a surface roughness Ra of not less than 0.5 nm. An electrode layer is formed in contact with the contact region. By heating the electrode layer and the substrate, siliciding reaction is caused between the electrode layer and the contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.