Semiconductor device and manufacturing method of same
US9704805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Apr 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.