Electrostatic discharge protection device comprising a silicon controlled rectifier
US9704850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Jun 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic discharge protection device including a silicon controlled rectifier. In one example, the silicon controlled rectifier includes a first n-type region located in a semiconductor substrate. The silicon controlled rectifier also includes a first p-type region located adjacent the first n-type region in the semiconductor substrate. The silicon controlled rectifier further includes an n-type contact region and a p-type contact region located in the first n-type region. The silicon controlled rectifier also includes an n-type contact region and a p-type contact region located in the first p-type region. The silicon controlled rectifier further includes a blocking region having a higher resistivity than the first p-type region. The blocking region is located between the n-type contact region and the p-type contact region in the first p-type region for reducing a trigger voltage of the silicon controlled rectifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.