Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof

US9704853B2 · kind B2 · utility

Assignee

• NXP USA, Inc. · US

Inventors

• Hubert M. Bode · Haar, DE
• Weize Chen · Phoenix, US
• Richard J. De Souza · Tempe, US
• Patrice M. Parris · Phoenix, US

Key dates

• Filing date: Nov 7, 2012
• Grant date: Jul 11, 2017
• Expiry date: Sep 22, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region, which is separated from the isolation structure by a portion of the semiconductor substrate having the first conductivity type. The resistor circuit is connected between the isolation structure and the body region. The resistor circuit may include one or more resistor networks and, optionally, a Schottky diode and/or one or more PN diode(s) in series and/or parallel with the resistor network(s).