Thin film transistor having germanium thin film and manufacturing method thereof, array substrate, display device
US9704891B2 · kind B2 · utility
1Cited by
3References
16Claims
0Family size
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Key dates
| Filing date | May 14, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | May 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A thin film transistor and manufacturing method thereof, an array substrate and a display device are provided. In the manufacturing method of the thin film transistor, manufacturing an active layer includes: forming a germanium thin film, and forming pattern of the active layer through a patterning process; conducting a topological treatment on the germanium thin film with a functionalized element, so as to obtain the active layer (4) with topological semiconductor characteristics. The resultant thin film transistor has a higher carrier mobility and a better performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.