Patent · US Active

Avalanche photodiode and manufacturing method thereof

US9705023B2 · kind B2 · utility

2Cited by

2References

20Claims

0Family size

Assignee

Huawei Technologies Co., Ltd. · CN

Inventors

Changliang Yu · 红钢城街道, CN
Zhenxing Liao · 红钢城街道, CN
Yanli Zhao · Beijing, CN

Key dates

Filing date	Aug 11, 2016
Grant date	Jul 11, 2017
Priority date	—
Expiry date	Aug 11, 2036

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/547
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An avalanche photodiode includes a GeOI substrate; an I—Ge absorption layer configured to absorb an optical signal and generate a photo-generated carrier; a first p-type SiGe layer, a second p-type SiGe layer, a first SiGe layer, and a second SiGe layer, where a Si content in any one of the SiGe layers is less than or equal to 20%; a first SiO2 oxidation layer and a second SiO2 oxidation layer; a first taper type silicon Si waveguide layer and a second taper type silicon Si waveguide layer; a heavily-doped n-type silicon Si multiplication layer; and anode electrodes and a cathode electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.