Light-emitting device and manufacturing method thereof
US9705029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2013 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Jun 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.