Patent · US Active

Light-emitting device

US9705040B2 · kind B2 · utility

1Cited by
44References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2015
Grant dateJul 11, 2017
Priority date
Expiry dateNov 12, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.