Method for producing a laser diode, mount and laser diode

US9705057B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Roland Enzmann · Regensburg, DE
• Stephan Haneder · Regensburg, DE
• Tomasz Swietlik · Regensburg, DE
• Christoph Walter · Stuttgart, DE
• Andreas Rozynski · Regensburg, DE
• Markus Graul · Regensburg, DE
• Karsten Auen · Regensburg, DE
• Jürgen Dachs · Baar-Ebenhausen, DE

Key dates

• Filing date: Aug 27, 2013
• Grant date: Jul 11, 2017
• Expiry date: Nov 9, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.