Patent · US Active

Magnetic memory element and magnetic memory

US9705073B2 · kind B2 · utility

2Cited by
0References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 26, 2016
Grant dateJul 11, 2017
Priority date
Expiry dateAug 26, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/85
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.