Apparatus and methods for measuring properties in a TSV structure using beam profile reflectometry
US9709386B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2210/56
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed are methods and apparatus for measuring a characteristics of a through-silicon via (TSV) structure. A beam profile reflectivity (BPR) tool is used to move to a first xy position having a TSV structure. The BPR tool is then used to obtain an optimum focus of at the first xy position by adjusting the z position to a first optimum z position for obtaining measurements at the first xy position. Via the BPR tool, reflectivity measurements for a plurality of angles of incidence are obtained at the first xy position. One or more film thicknesses for the TSV structure are determined based on the reflectivity measurements. A z position can also be recorded and used to determine a height of such TSV structure, as well as one or more adjacent xy positions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.