MEMS digital variable capacitor design with high linearity
US9711291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2014 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jun 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2059/0072
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.