Method for manufacturing thin-film transistor by implanting ions into channel region for lowering leakage current
US9711356B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 22, 2014 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Sep 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method for manufacturing a thin-film transistor, comprising the steps of: forming a semiconductor active layer, and a doped semiconductor active layer; forming a source-drain metal layer; forming a channel region; and implanting ions for lowering the TFT leakage current into the surface of the semiconductor active layer in the channel region via ion implantation after forming the channel region. The invention further relates to a thin-film transistor, a TFT array substrate and a display device. The invention has the following beneficial effects: by implanting ions for lowering the TFT leakage current into the channel region, the electrical performance of a TFT may be improved, and the thickness of a semiconductor active layer in a channel region may be changed controllably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.