Semiconductor device, or crystal
US9711590B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2013 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Sep 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.