Thin film transistor, method for fabricating the same and display apparatus
US9711653B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jul 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.