Oxide semiconductor film and semiconductor device
US9711655B2 · kind B2 · utility
41Cited by
77References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Apr 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.