Integrated circuits with optical modulators and photodetectors and methods for producing the same
US9711662B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Apr 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming an upper interlayer dielectric overlying an optical modulator and a photodetector, where the photodetector has a shoulder and a plug. An etch stop is formed overlying the upper interlayer dielectric. The etch stop is a first, second, and third distance from an uppermost surface of the optical modulator, the shoulder, and the plug, respectively, where the first, second, and third distances are all different from each other. A first, second, and third contact are formed through the upper interlayer dielectric, where the first, second and third contacts are in electrical communication with the optical modulator, the shoulder, and the plug, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.