Methods for producing photovolaic material and device able to exploit high energy photons
US9711674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2009 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention concerns methods for producing photovoltaic material and a device able to exploit high energy photons. The photovoltaic material is obtained from a conventional photovoltaic material having a top surface intended to be exposed to photonic radiation, having a built-in P-N junction delimiting an emitter part and a base part and comprising at least one area or region specifically designed, treated or adapted to absorb high energy or energetic photons, located adjacent or near at least one hetero-interface. According to the invention, this material is subjected to treatments resulting in the formation of at least one semiconductor based metamaterial field or region being created, as a transitional region of the or a hetero-interface, in an area located continuous or proximate to the or an absorption area or region for the energetic photons of the photonic radiation impacting said photovoltaic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.