Resistive random access memory having stable forming voltage

US9711720B2 · kind B2 · utility

Assignee

• NATIONAL SUN YAT-SEN UNIVERSITY

Inventors

• Ting-Chang Chang · Hsinchu, TW
• Kuan-Chang Chang
• Tsung-Ming Tsai
• Tian-Jian Chu
• Chih-Hung Pan · Taichung, TW

Key dates

• Filing date: Jun 9, 2015
• Grant date: Jul 18, 2017
• Expiry date: Jun 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.