Multiple range RF amplifier
US9712116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2015 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Dec 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45394
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An amplifier includes at least two amplification stages coupled in parallel. Each amplification stage includes at differential pair of amplifying MOS transistors having gates connected to a first and second input nodes common to amplifying stages, and bulk regions connected to each other but insulated from bulk regions of the amplifying MOS transistors of the other amplification stages. A configuration circuit generates bias voltage for application to the bulk terminals in each amplification stage to set the threshold voltages of the amplifying MOS transistors, and thus configuring the operating range of each amplification stage so that different amplification stages have different operating ranges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.