Independent control of branch FETs for RF performance improvement
US9712160B2 · kind B2 · utility
2Cited by
1References
44Claims
0Family size
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Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Mar 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/485
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A FET-based RF switch architecture and method that provides for independent control of FETs within component branches of a switching circuit. With independent control of branch FETs, every RF FET in an inactive branch that is in an “open” (capacitive) state can be shunted to RF ground and thus mitigate impedance mismatch effects. Providing a sufficiently low impedance to RF ground diminishes such negative effects and reduces the sensitivity of the switch circuit to non-matched impedances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.