Organic thin film transistor, organic semiconductor thin film, and organic semiconductor material
US9714253B2 · kind B2 · utility
1Cited by
5References
11Claims
0Family size
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Key dates
| Filing date | Feb 26, 2015 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that at least one of R1 to R4 and R6 to R9 represents a substituent represented by -L-R, L represents a specific divalent linking group, and R represents an alkyl group, an oligooxyethylene group, an oligosiloxane group, or a trialkylsilyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.