Film-forming method of an osmium film
US9714468B2 · kind B2 · utility
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7References
1Claims
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Key dates
| Filing date | Jul 30, 2014 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jul 28, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12361
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A film-forming method of an osmium film includes disposing a metal plate in a chamber; introducing OsO4 gas at a flow rate of 0.1 to 3 cc/min and an inert gas for maintaining discharge into the chamber while maintaining the pressure in the chamber to 13 to 40 Pa; and forming an osmium film on the surface of the metal plate by turning the gas in the chamber into plasma using radio frequency output power with the density of 0.25 to 2.0 W/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.