Patent · US Active

Semiconductor strain gauge

US9714876B2 · kind B2 · utility

5Cited by
3References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 26, 2015
Grant dateJul 25, 2017
Priority date
Expiry dateJul 2, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R17/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Methods and apparatus for a semiconductor strain gauge pressure sensor. An apparatus includes a sense element configured to be exposed to a pressure environment, the sense element including at least one highly doped semiconductor strain gauge, the highly doped semiconductor strain gauge including a five pad single full Wheatstone bridge, an electronics package disposed on a carrier and electrically coupled to the sense element, the carrier disposed on a port that comprises the sense element, a housing disposed about the sense element and electronics package, and a connector joined to the housing and electrically connected to the electronics package, the connector including an external interface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.