Wiring structure and method of forming the same, and semiconductor device including the wiring structure
US9716043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2016 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jun 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a wiring structure, a first mask having a first opening including a first portion extending in a second direction and a second portion extending in a first direction is formed. A second mask including a second opening overlapping the first portion of the first opening and third openings each overlapping the second portion of the first opening is designed. The second mask is fabricated to include a fourth opening by enlarging the second opening. The fourth opening overlaps a boundary between the first and second portions of the first opening. An insulating interlayer is etched using the first and second masks to form first and second via holes corresponding to the fourth and third openings, and a trench corresponding to the first opening. First and second vias and a wiring are formed to fill the first and second via holes and the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.