Lateral double diffused metal oxide semiconductor field-effect transistor
US9716169B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2014 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Aug 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A lateral double diffused metal oxide semiconductor field-effect transistor includes semiconductor substrates, body regions positioned in the semiconductor substrates, drift regions positioned in the semiconductor substrates, source regions and a body leading-out region which are positioned in the body regions and spaced from the drift regions, a field region and drain regions which are positioned in the drift regions, and gates positioned on the surfaces of the semiconductor substrates to partially cover the body regions, the drift regions and the field region, wherein the field region is of a finger-like structure and comprises a plurality of strip field regions which extend from the source regions to the drain regions and are isolated by the active regions; and the strip field regions provided with strip gate extending regions extending from the gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.