Semiconductor device manufacturing method, and semiconductor device
US9716186B2 · kind B2 · utility
1Cited by
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12Claims
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Key dates
| Filing date | Oct 6, 2015 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Oct 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method according to an embodiment includes: forming an n-type SiC layer on a SiC substrate; forming a p-type impurity region at one side of the SiC layer; exposing other side of the SiC layer by removing at least part of the SiC substrate; implanting carbon (C) ions into exposed part of the SiC layer; performing a heat treatment; forming a first electrode on the p-type impurity region; and forming a second electrode on the exposed part of the SiC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.