Chemically amplified positive resist composition and pattern forming process
US9720323B2 · kind B2 · utility
7Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Feb 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition comprising a resin adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium or iodonium salt of nitrogen-containing carboxylic acid has a high resolution. By lithography, a pattern with minimal LER can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.