Patent · US Active

Memory system, method for controlling magnetic memory, and device for controlling magnetic memory

US9720772B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 10, 2015
Grant dateAug 1, 2017
Priority date
Expiry dateOct 14, 2035

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB82Y25/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory system according to an embodiment includes a plurality of magnetic nanowires, a read unit that reads data from the magnetic nanowires, a shift control unit that shifts domain walls in the magnetic nanowires, and a read control unit. The read control unit is configured to control the read unit to read the data from the magnetic nanowires in parallel, store two or more of the data read in parallel, and when the data corresponding to a first magnetic nanowire of the magnetic nanowires are delayed or advanced as compared to the data corresponding to a second magnetic nanowire of the magnetic nanowires, determines a misalignment in the data and correct the data based on the misalignment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.