Precessional magnetization reversal in a magnetic tunnel junction with a perpendicular polarizer
US9721631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2014 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Mar 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic device that includes a perpendicular magnetized polarizing layer configured to provide a first spin-torque and an in-plane magnetized free layer having a magnetization vector having at least a first stable state and a second stable state. The magnetic device also includes a reference layer configured to provide a second spin-torque. The first spin-torque and the second spin-torque can combine. The in-plane magnetized free layer and the reference layer form a magnetic tunnel junction and the combined first spin-torque and second spin-torque influences the magnetic state of the in-plane magnetized free layer. An application of a voltage pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device causes the magnetization vector to oscillate between the first stable state and the second stable state for a portion of the duration regardless of an initial state of the magnetization vector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.