Methods for enhancing P-type doping in III-V semiconductor films
US9721810B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Oct 28, 2011 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
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