Controllable integrated capacitive device
US9721858B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.